The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current. IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
Toshiba 30F124 Datasheet PDF / 30F124 Pinout This device is IGBT( Insulated Gate Bipolar Transistor ). Applications include transducer amplifiers, dc amplification blocks, and all the conventional operational-amplifier circuits that now can be more easily implemented in single-supply-voltage systems.įor example, the LM124 device can be operated directly from the standard 5-V supply that is used in digital systems and provides the required interface electronics, without requiring additional ☑5-V supplies.
The low supply-current drain is independent of the magnitude of the supply voltage. Operation from split supplies also is possible if the difference between the two supplies is 3 V to 32 V (3 V to 26 V for the LM2902 device), and V CC is at least 1.5 V more positive than the input common-mode voltage. LM324 consist of four independent high-gain frequency-compensated operational amplifiers that are designed specifically to operate from a single supply over a wide range of voltages.
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